PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 11
PSMN023-80LS,115
Manufacturer Part Number
PSMN023-80LS,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN023-80LS115.pdf
(14 pages)
Specifications of PSMN023-80LS,115
Input Capacitance (ciss) @ Vds
1295pF @ 40V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5583-2
NXP Semiconductors
8. Revision history
Table 7.
PSMN023-80LS
Product data sheet
Document ID
PSMN023-80LS v.2
Modifications:
PSMN023-80LS v.1
Revision history
20100818
20100624
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Objective data sheet
Data sheet status
Product data sheet
Rev. 2 — 18 August 2010
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Change notice
-
-
PSMN023-80LS
Supersedes
PSMN023-80LS v.1
-
© NXP B.V. 2010. All rights reserved.
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