PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN023-80LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN023-80LS,115

• Input Capacitance (ciss) @ Vds: 1295pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5583-2

NXP Semiconductors
Table 6.
PSMN023-80LS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
D
40
30
20
10
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
> I
Parameter
source-drain voltage
reverse recovery time
recovered charge
D
X R
10
DS
DSon
2
= 10 V
T
j
…continued
= 175 °C
20
4
30
Conditions
I
see
I
V
V
T
All information provided in this document is subject to legal disclaimers.
S
S
003aae502
GS
DS
003aae500
j
I
= 25 °C
= 10 A; V
= 10 A; dI
D
(A)
(V)
Figure 17
= 40 V
40
Rev. 2 — 18 August 2010
6
GS
S
/dt = 100 A/µs; V
= 0 V; T
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
D
50
40
30
20
10
40
30
20
10
0
0
GS
function of drain-source voltage; typical values
of gate-source voltage; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
4
j
j
= 25°C; t
= 25°C; I
= 0 V;
0.5
8
p
D
6.5
= 300 µs
= 10 A
7.0
8.0
PSMN023-80LS
1
Min
-
-
-
12
1.5
6.0
Typ
0.85
36
53
16
V
GS
© NXP B.V. 2010. All rights reserved.
2
V
003aae501
003aae503
5.5
(V) = 4.2
V
GS
DS
Max
1.2
-
-
(V)
(V)
4.8
5.0
4.6
4.5
4.4
2.5
20
Unit
V
ns
nC
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