PSMN023-80LS,115 NXP Semiconductors, PSMN023-80LS,115 Datasheet - Page 2

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PSMN023-80LS,115

Manufacturer Part Number
PSMN023-80LS,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN023-80LS,115

Input Capacitance (ciss) @ Vds
1295pF @ 40V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
34 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5583-2
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN023-80LS
Product data sheet
Pin
1
2
3
4
5,6,7,8
mb
Type number
PSMN023-80LS
Symbol Description
S
S
S
G
D
D
Pinning information
Ordering information
source
source
source
gate
drain
mounting base; connected to
drain
Table 1.
QFN3333
Package
Name
Symbol
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
DS(AL)S
GD
G(tot)
Quick reference data
Parameter
gate-drain charge V
total gate charge
non-repetitive
drain-source
avalanche energy
Description
plastic thermal enhanced very thin small outline package;
no leads; 8 terminals
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 August 2010
Simplified outline
SOT873-1 (QFN3333)
N-channel QFN3333 80 V 23 mΩ standard level MOSFET
Conditions
V
see
V
I
R
D
…continued
GS
DS
GS
GS
= 34 A; V
Transparent
Figure 15
= 10 V; I
= 40 V; see
= 10 V; T
8 7 6 5
1 2 3 4
= 50 Ω; unclamped
top view
sup
D
j(init)
= 30 A;
≤ 80 V;
Figure
= 25 °C;
14;
Graphic symbol
PSMN023-80LS
mbb076
G
Min
-
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
4.8
21
-
Version
SOT873-1
Max Unit
-
-
37
2 of 14
nC
nC
mJ

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