PSMN1R8-30PL,127 NXP Semiconductors, PSMN1R8-30PL,127 Datasheet - Page 4

MOSFET N-CH 30V TO220AB

PSMN1R8-30PL,127

Manufacturer Part Number
PSMN1R8-30PL,127
Description
MOSFET N-CH 30V TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R8-30PL,127

Input Capacitance (ciss) @ Vds
10180pF @ 12V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Power - Max
270W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
270 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5234
NXP Semiconductors
PSMN1R8-30PL
Product data sheet
Fig 3.
10
10
10
(A)
10
I
D
4
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
(1)
All information provided in this document is subject to legal disclaimers.
1
= V
DS
Rev. 02 — 2 November 2010
/ I
D
DC
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
10
PSMN1R8-30PL
V
DS
10 μs
100 μs
1 ms
10 ms
100 ms
(V)
© NXP B.V. 2010. All rights reserved.
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