FDD5N50NZTM Fairchild Semiconductor, FDD5N50NZTM Datasheet - Page 4

• Manufacturer Part Number: FDD5N50NZTM
• Description: MOSFET N-CH 500V DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDD5N50NZTM

• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Power - Max: 62W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD5N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
20
10
-100
1
1
Operation in This Area
is Limited by R
vs. Temperature
vs. Case Temperature
-50
T
V
J
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
DS(on)
0.01
0.1
0
3
1
*Notes:
10
1. T
2. T
3. Single Pulse
-5
0.05
Single pulse
0.5
0.2
0.02
0.01
0.1
C
J
= 150
= 25
DC
50
10ms
o
C
o
100
C
Figure 11. Transient Thermal Response Curve
1ms
*Notes:
1. V
2. I
[
10
o
100
100
C
D
-4
GS
]
= 250
µ
s
= 0V
30
µ
Rectangular Pulse Duration [sec]
A
µ
1000
150
s
(Continued)
10
-3
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
10
Figure 10. Maximum Drain Current
5
4
3
2
1
0
-100
25
-2
*Notes:
1. Z
2. Duty Factor, D= t
3. T
P
DM
θ
-50
JM
50
T
JC
T
J
C
- T
(t) = 2
vs. Temperature
, Junction Temperature
, Case Temperature
10
C
= P
t
-1
1
o
t
C/W Max.
2
DM
75
0
* Z
1
θ
/t
JC
2
(t)
100
50
1
[
o
C
*Notes:
[
]
1. V
2. I
o
100
C
125
D
]
GS
= 2A
= 10V
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150
150