BUK661R8-30C,118 NXP Semiconductors, BUK661R8-30C,118 Datasheet - Page 10

• Manufacturer Part Number: BUK661R8-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R8-30C,118

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 15. Normalized drain-source on-state resistance
Fig 17. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
All information provided in this document is subject to legal disclaimers.
003aaa508
T
j
( ° C)
03aa27
Rev. 02 — 28 December 2010
180
Fig 16. Gate-source voltage as a function of gate
Fig 18. Gate-source voltage as a function of gate
V
(V)
V
GS
(V)
N-channel TrenchMOS intermediate level FET
10
10
GS
8
6
4
2
0
8
6
4
2
0
charge; typical values
charge; typical values
0
0
V
DS
10
50
= 6V
14V
15V
BUK661R8-30C
100
20
24V
150
30
© NXP B.V. 2010. All rights reserved.
24V
Q
003aae298
Q
003aaf019
G
G
(nC)
(nC)
200
40
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