BUK661R8-30C,118 NXP Semiconductors, BUK661R8-30C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK661R8-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R8-30C,118

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 7.
Fig 9.
(A)
(S)
g
I
D
10
10
10
10
10
10
200
150
100
fs
50
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
Sub-threshold drain current as a function of
0
0
25
1
min
50
2
typ
max
75
3
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003aae295
003aad806
V
I
GS
D
(A)
(V)
Rev. 02 — 28 December 2010
100
4
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
(mΩ)
R
V
DSon
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
15
12
4
3
2
1
0
9
6
3
0
-60
of gate-source voltage; typical values.
junction temperature
Drain-source on-state resistance as a function
0
0
4
BUK661R8-30C
max @1mA
min @2.5mA
typ @1mA
60
8
120
12
© NXP B.V. 2010. All rights reserved.
003aae542
T
003aae365
V
j
GS
(°C)
(V)
180
16
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