BUK661R8-30C,118 NXP Semiconductors, BUK661R8-30C,118 Datasheet - Page 11

• Manufacturer Part Number: BUK661R8-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R8-30C,118

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R8-30C
Product data sheet
Fig 19. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
V
All information provided in this document is subject to legal disclaimers.
DS
003aae296
C
C
C
(V)
oss
iss
rss
Rev. 02 — 28 December 2010
10
2
Fig 20. Source current as a function of source-drain
(A)
I
S
100
N-channel TrenchMOS intermediate level FET
80
60
40
20
0
voltage; typical values
0
0.3
T
j
= 175 °C
BUK661R8-30C
0.6
0.9
T
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
003aae300
V
SD
(V)
1.2
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