BUK661R8-30C,118 NXP Semiconductors, BUK661R8-30C,118 Datasheet - Page 6

• Manufacturer Part Number: BUK661R8-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R8-30C,118

• Input Capacitance (ciss) @ Vds: 10918pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Power - Max: 263W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 263 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
6. Characteristics
Table 6.
BUK661R8-30C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
DSS
GSS
(BR)DSS
GS(th)
DSon
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
Conditions
I
I
I
see
I
see
I
see
I
see
I
see
V
V
V
V
V
V
V
see
V
see
V
see
V
see
V
see
V
see
V
see
I
T
I
see
I
see
I
see
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
D
D
j
DS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 2.5 mA; V
= 45 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure
Figure 11
Figure 10
Figure
Figure 10
Figure 13
Figure 14
Figure 13
Figure 14
Figure 14
Figure 13
Figure
Figure
Figure
Figure
= 30 V; V
= 30 V; V
= 30 V; V
= 20 V; V
= -20 V; V
= -15 V; V
= 10 V; I
= 5 V; I
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 5 V; I
= 10 V; I
Rev. 02 — 28 December 2010
9; see
11; see
13; see
17; see
18; see
17; see
D
D
DS
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 15 A; T
D
D
= 25 A; T
GS
GS
GS
DS
DS
GS
GS
DS
DS
= 25 A; T
= 15 A; T
= 25 A; T
= 15 V; V
= 24 V; V
= 24 V; V
= 24 V; V
= V
= V
= V
= V
= 25 A; T
= 15 A; T
Figure
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
Figure 10
GS
GS
GS
GS
Figure 12
Figure 15
Figure 18
Figure 17
Figure 18
GS
; T
; T
; T
; T
16; see
j
j
; T
= 25 °C;
= 25 °C;
j
j
j
j
j
j
j
GS
GS
GS
GS
j
j
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 175 °C;
j
j
j
j
= 25 °C;
= 25 °C;
= 25 °C
= 175 °C
= 175 °C
= 25 °C
j
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 175 °C;
= 4.5 V;
= 5 V;
= 10 V;
= 10 V;
N-channel TrenchMOS intermediate level FET
Figure 17
BUK661R8-30C
Min
30
27
27
1.8
0.5
-
1.1
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
2.3
-
-
1.5
-
0.02
-
-
2
2
2
1.6
11.1
2.48
11.4
10
2.24
-
5.9
95
168
27
45
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
2.8
-
3.3
2
-
1
500
500
100
100
100
1.9
13
3.3
12
11.7
2.8
3.6
-
-
-
-
-
Unit
V
V
V
V
V
V
V
V
µA
µA
µA
nA
nA
nA
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
C
nC
nC
nC
nC
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