BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 39
BFU790F,115
Manufacturer Part Number
BFU790F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU790F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
234mW
Dc Current Gain (hfe) (min) @ Ic, Vce
235 @ 10mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
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2.2
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGe:C microwave
NPN transistors, you get high switching frequencies plus extremely high gain and low noise. All this
in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 30 GHz.
Benefits
` Plastic surface-mount SOT343F package
` SiGe:C process delivers high switching frequency from
` Cost-effective alternative to GaAs devices
` RoHS compliant
Applications
` Low noise amplifier (LNA) for microwave communications
` 2
` GPS systems
` Satellite radio
` WLAN/WiMAX and CDMA applications, LTE
` DVB, CMMB
a silicon-based device
systems
low-noise blocks (LNBs)
nd
stage LNA and mixer in direct broadcast satellite (DBS)
Always the right match with our latest 6
wideband transistors
The NPN microwave transistors deliver an unbeatable blend of
high switching frequency, high gain and very low noise. Thanks
to the ultra-low noise figures, they are perfect for your sensitive
RF receivers particularly those for high-performance cell
phones. Alternatively, with the high cut-off frequencies, they
are your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
These new 6th and 7th generation SiGe:C wideband transistors
get their outstanding performance from our innovative silicon-
germanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was
designed specifically to meet the needs of real-life, high-
frequency applications and delivers an unrivalled fusion of
high power gain and excellent dynamic range. It combines the
performance of gallium-arsenide (GaAs) technologies with the
reliability of a silicon-based process. In addition, with these
transistors, you don’t need a biasing IC or negative biasing
voltage. So it’s a much more cost-effective solution than GaAs
pHEMT devices.
Full portfolio overview of 6
wideband transistors at chapter 3.3.1
th
and 7
th
generation SiGe:C
NXP Semiconductors RF Manual 14
th
and 7
th
generation RF
th
edition
41
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