BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 42
BFU790F,115
Manufacturer Part Number
BFU790F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU790F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
234mW
Dc Current Gain (hfe) (min) @ Ic, Vce
235 @ 10mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
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- Download datasheet (3Mb)
2.5
NXP satellite LNB devices BFU725F/N1 and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are
manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are
the latest additions to NXP’s leading portfolio for satellite LNB.
BFU725F/N1 RF transistor
The BFU725F/N1 is a RF transistor that can be used in the
LNA part and as a mixer for a DBS LNB. In either application,
it delivers low power consumption, good noise and linearity,
and the lowest cost compared to GaAs pHEMT solution.
BFU725F/N1 as mixer in Ku-band LNB
` Power consumption: 2 mA at 5 V
` Single supply: 3, 5, or 6 V
` Noise, Single Side Band: 7 dB (including BPF)
` Linearity: better than 0 dBm OIP3
` Gain, SSB: 2 dB (including BPF)
` RF/LO/IF Match: better than 12/15/18 dB
` Broadband unconditionally stable
` LO-RF isolation better than 18 dB
BFU725F/N1 as 2
` Power consumption: 11 mA at 5 V
` Single supply: 3, 5, or 6 V
` Noise, SSB: typically 1.3 dB
` Linearity: better than 10 dBm OIP3
` Gain, SSB: typically 10.5 dB
` In/Out match: better than 7/12 dB
` Broadband unconditionally stable
44
NXP Semiconductors RF Manual 14
Complete satellite portfolio for all LNB architectures
nd
or 3
rd
stage LNA in Ku-band LNB
th
edition
BFU725F/N1 as LNA for C-band LNB
` Power consumption: 7 mA at 5 V
` Single supply: 5 or 6 V
` Noise: 0.65 dB
` Linearity: better than 10 dBm OIP3
` Gain: 15 dB
` In/Out Match: better than 10 dB
` Broadband unconditionally stable
BGA28xx MMICs as IF amplifiers (1
For compatibility with existing designs, the series uses a
market standard package, the SOT363 and the pin-compliant
SOT363F package. The pinning is identical to NXP’s current
gain block family, and the blocks deliver similar noise figures.
New features include flatter gain, a gain slope of 0.5 dB,
improved P
(also not at high P
` Internally matched at 50 Ω
` Gain slope 0.5 dB
` Single supply current
` Reverse isolation: >30 dB up to 2 GHz
` Best-in-class linearity vs current consumption
` Noise figure: 4 to 6 dB at 1 GHz
` Unconditionally stable (K > 1)
` High compression point models work without output inductor
` 6-pin SOT363 plastic SMD package
These products – the BFU725F/N1 transistor for LNA and
mixer applications, and the BGA28xx series of MMICs
for IF amplifiers – are the most recent additions to NXP’s
- At 3.3 V or 5 V
1dB
vs. I
1dB
cc
, and no necessity of an output inductor
models).
st
stage & output stage)
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