BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 65
BFU790F,115
Manufacturer Part Number
BFU790F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU790F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
234mW
Dc Current Gain (hfe) (min) @ Ic, Vce
235 @ 10mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
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3.2.3 Band-switch diodes
Why choose NXP Semiconductors’ bandswitch diodes:
` Reliable volume supplier
` Short leadtimes
` Low series Inductance
` Low Insertion loss
` Low capacitance
` High reverse Isolation
Bold = Highly recommended product
3.2.4 Schottky diodes
Why choose NXP Semiconductors’ schottky diodes
` (Very) low diode capacitance
` (Very) low forward voltage
` Single and triple-isolated diode
` (Ultra / very) small package
Applications
` Digital applications:
` RF applications:
Low-capacitance Schottky diodes
^ Diodes have matched capacitance
Type
BAT17
PMBD353
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
Type
BA277
BA591
BA891
BAT18
NEW : Schottky diode selection guide on www.nxp.com/rfschottkydiodes
- ultra high-speed switching
- clamping circuits
- diode ring mixer
- RF detector
- RF voltage doubler
Easy-to-use parametric filters help you to choose the right schottky
diode for your design.
Package
SOD523
SOD323
SOD523
SOT23
Package
SOT23
SOT23
SOT23
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
V
Configuration
triple isolated
triple isolated
triple isolated
R
dual series
dual series
dual series
(V)
35
35
35
35
max
dual c.a.
dual c.c
single
single
single
single
single
IF max
(mA)
100
100
100
100
V
R
(V)
max.
15
15
15
15
15
15
15
4
4
4
4
4
4
r
D
(Ω)
0.7
0.7
0.7
0.7
max
@ IF =
(mA)
2
3
3
5
I
F
(mA)
max.
30
30
30
30
30
30
30
30
30
30
30
30
30
(MHz)
@ f =
100
100
100
200
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
V
F
(mV)
max.
C
d
(pF)
1.2
0.9
0.9
max
1
@ V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
NXP Semiconductors RF Manual 14
(V)
20
C
6
3
3
R
D
(pF)
=
max.
(MHz)
@ f =
1
1
1
1
th
edition
67
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