F276-CEG-T-TR STMicroelectronics, F276-CEG-T-TR Datasheet - Page 175

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F276-CEG-T-TR

Manufacturer Part Number
F276-CEG-T-TR
Description
IC MCU 16BIT 832KB FLASH 144LQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet

Specifications of F276-CEG-T-TR

Core Processor
ST10
Core Size
16-Bit
Speed
48MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
832KB (832K x 8)
Program Memory Type
FLASH
Ram Size
68K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
144-LFQFP
Processor Series
ST10F27x
Core
ST10
Data Bus Width
16 bit
Data Ram Size
68 KB
Interface Type
CAN, I2C
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
111
Number Of Timers
2
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 24 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
F276-CEG-T-TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
ST10F276E
23
23.1
Note:
23.2
Electrical characteristics
Absolute maximum ratings
Table 86.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (V
voltage on pins with respect to ground (V
Absolute Maximum Ratings.
During Power-on and Power-off transients (including Stand-by entering/exiting phases), the
relationships between voltages applied to the device and the main V
respected. In particular, power-on and power-off of V
transient, in order to avoid undesired current injection through the on-chip protection diodes.
Recommended operating conditions
Table 87.
1. The value of the V
Symbol
V
V
V
Symbol
ESD
I
V
V
V
AGND
T
V
exceed the upper limit (up to 6.0 volts) for a maximum of 100 hours over the global 300000 hours,
representing the lifetime of the device (about 30 years). On the other hand, it is possible to exceed the
lower limit (down to 4.0 volts) whenever RTC and 32 kHz on-chip oscillator amplifier are turned off (only
Stand-by RAM powered through V
V
(in the range of tenth of µA).
STBY
AREF
I
TOV
OV
V
DD
AREF
ST
STBY
DD
IO
T
T
DD
A
J
, the input section of V
Voltage on V
Voltage on V
Voltage on V
Voltage on V
Voltage on any pin with respect to ground (V
Input current on any pin during overload condition
Absolute sum of all input currents during overload condition
Storage temperature
ESD susceptibility (human body model)
Operating supply voltage
Operating stand-by supply voltage
Operating analog reference voltage
Ambient temperature under bias
Junction temperature under bias
Absolute maximum ratings
Recommended operating conditions
STBY
DD
STBY
AREF
voltage is specified in the range 4.5 - 5.5 volts. Nevertheless, it is acceptable to
AGND
STBY
pins with respect to ground (V
pin with respect to ground (V
pin with respect to ground (V
pin with respect to ground (V
/EA pin can generate a spurious static consumption on V
Parameter
STBY
Parameter
pin in Stand-by mode). When V
SS
(1)
) must not exceed the values defined by the
(2)
SS
SS
SS
AREF
)
SS
SS
)
)
)
)
must be coherent with the V
STBY
Min.
4.5
-40
0
voltage is lower than main
Electrical characteristics
IN
- 0.3 to V
- 0.5 to V
> V
DD
- 0.3 to +6.5
- 65 to +150
DD
Value
must always be
2000
| 75 |
± 10
V
SS
+125
+150
Max.
DD
or V
DD
DD
V
5.5
DD
power supply
+ 0.3
+ 0.5
IN
< V
SS
175/231
Unit
°C
Unit
V
DD
mA
) the
°C
V
V

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