IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 2

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH30N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Max: 220W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 220W

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (SiC)
Symbol Test Conditions
(T
V
R
Notes
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
ri
fi
ri
fi
d(on)
d(off)
d(on)
d(off)
fs
on
off
on
off
ies
oes
res
g
thJC
thCS
F
thJC
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
TO-247
I
V
F
I
TO-220
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
C
C
C
C
CE
= 10A, V
= 20A, V
= 20A, V
CE
CE
PRELIMINARY TECHNICAL INFORMATION
= 20A, V
= 20A, V
= 25V, V
= 300V, R
= 300V, R
GE
CE
GE
GE
GE
GE
= 0V, Note 1
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 5Ω
= 5Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
T
J
= 125°C
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
9
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
Typ.
1075
1.65
1.80
0.12
0.16
0.33
0.21
0.50
0.09
196
CE
16
29
38
17
17
20
42
47
16
21
70
90
8
(Clamp), T
IXGA30N60C3C1 IXGP30N60C3C1
0.18
0.56 °C/W
Max.
Max.
1.10 °C/W
2.10
75
6,404,065 B1
6,534,343
6,583,505
J
°C/W
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
mJ
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
G
.
6,683,344
6,710,405 B2
6,710,463
6,727,585
6,759,692
6,771,478 B2 7,071,537
IXGH30N60C3C1
7,005,734 B2 7,157,338B2
7,063,975 B2