IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 3

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH30N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Max: 220W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 220W

© 2009 IXYS CORPORATION, All Rights Reserved
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
TO-247 (IXTH) Outline
Pins:
Terminals: 1 - Gate
1 - Gate
3 - Source
1
2
3
2 - Drain
4 - Drain
e
2 - Drain
∅ P
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
Millimeter
4.7
2.2
2.2
1.0
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
IXGA30N60C3C1 IXGP30N60C3C1
IXGH30N60C3C1