IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 4

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH30N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Max: 220W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 220W

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
0.4
10A
8
0.8
Fig. 5. Collector-to-Emitter Voltage
0.8
9
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
20A
vs. Gate-to-Emitter Voltage
1.2
I
1.2
10
C
= 40A
V
CE
V
1.6
V
@ 125ºC
CE
@ 25ºC
- Volts
GE
- Volts
1.6
11
- Volts
V
2.0
GE
= 15V
V
2.0
12
13V
11V
GE
2.4
= 15V
13V
2.4
13
T
2.8
J
= 25ºC
11V
2.8
14
9V
7V
3.2
7V
9V
3.6
3.2
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
70
60
50
40
30
20
10
80
60
40
20
0
0
IXGA30N60C3C1 IXGP30N60C3C1
25
5
0
2
Fig. 2. Extended Output Characteristics
6
50
4
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
Junction Temperature
7
T
J
- Degrees Centigrade
75
8
V
T
J
CE
V
= 125ºC
@ 25ºC
GE
- Volts
- 40ºC
25ºC
10
8
- Volts
I
IXGH30N60C3C1
C
I
= 10A
C
I
100
= 20A
12
C
= 40A
CE(sat)
9
14
on
V
GE
125
16
V
GE
= 15V
10
= 15V
13V
11V
9V
7V
18
150
20
11