GT15Q102 Toshiba, GT15Q102 Datasheet - Page 5

• Manufacturer Part Number: GT15Q102
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT15Q102

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 15A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Not Compliant

3000
1000
10
10
10
10
300
100
100
10
10
10
10
0.5
0.3
0.1
30
10
50
30
10
5
3
1
3
2
1
0
1
2
3
4
10
1
1
I C max (pulsed)*
I C max (continuous)
*: Single
Curves must be
derated linearly with
increase in
temperature.
Common emitter
V GE
f
Tc
5
nonrepetitive pulse
Tc
Tc
1 MHz
10
25°C
3
25°C
25°C
Collector-emitter voltage V
Collector-emitter voltage V
0
3
4
operation
DC
10
10
Safe operating area
Pulse width t
10
3
R
10
30
C – V
th (t)
2
30
10
– t
CE
100
w
w
1
100 s*
100
(s)
1 ms*
10
300
CE
CE
0
10 ms*
300
(V)
(V)
50 s*
1000
10
1
C oes
C ies
C res
1000
3000
10
2
5
1000
800
600
400
200
0.5
0.3
0.1
50
30
10
0
5
3
1
0
1
Common emitter
R L
Tc
T j
V GE
R G
25°C
40
600
3
V CE
Collector-emitter voltage V
125°C
40
56
15 V
400
Gate charge Q
200 V
10
Reverse bias SOA
V
CE
80
30
, V
GE
100
– Q
120
G
G
(nC)
300
CE
160
(V)
1000
GT15Q102
2002-01-18
3000
200
20
16
12
8
4
0