IXFN80N50 IXYS SEMICONDUCTOR, IXFN80N50 Datasheet
IXFN80N50
Manufacturer Part Number
IXFN80N50
Description
N CH MOSFET, 500V, 80A, SOT-227B
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFN80N50.pdf
(4 pages)
Specifications of IXFN80N50
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Quantity
Price
Company:
Part Number:
IXFN80N50
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN80N50P
Manufacturer:
ARTESYN
Quantity:
1 000
Part Number:
IXFN80N50P
Quantity:
122
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Part Number:
IXFN80N50Q2
Manufacturer:
WESTINGHOUSE
Quantity:
228
Part Number:
IXFN80N50Q2
Quantity:
123
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
S
ISOL
C
C
C
C
C
C
J
J
J
GS
GS
GS
DS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
= 0.5 • I
G
= 2 Ω
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
rr
DSS
JM
,
IXFN 80N50
min.
500
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
500
500
±20
±30
780
150
320
80
64
30
80
6
5
max.
±200
100
4.5
55
2
D
S
V/ns
mΩ
mA
mJ
°C
°C
°C
V~
V~
nA
µA
W
V
V
A
A
A
V
V
V
V
g
J
V
I
R
t
G = Gate
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
D25
rr
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
DS (on)
HDMOS
G
≤ ≤ ≤ ≤ ≤ 250 ns
= 500
=
=
D = Drain
S
TM
DS98538E(12/03)
process
D
80
55 mΩ Ω Ω Ω Ω
S
V
A
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IXFN80N50 Summary of contents
Page 1
HiPerFET TM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
... T - Degrees C C Fig. 5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 100 Fig. 2. High Temperature Output Characteristics 2.8 2.5 2.2 1.9 1.6 1.3 1 vs. Drain Current IXFN80N50 - PG 1 IXFN 80N50 125 Volts 10V 80A D I =40A 100 ...
Page 4
V = 250 100 150 200 250 300 350 400 Gate Charge - nC Fig. 7 Gate Charge Characteristic Curve ...