IXFN80N50 IXYS SEMICONDUCTOR, IXFN80N50 Datasheet - Page 3
![N CH MOSFET, 500V, 80A, SOT-227B](/photos/22/5/220599/4466018_sml.jpg)
IXFN80N50
Manufacturer Part Number
IXFN80N50
Description
N CH MOSFET, 500V, 80A, SOT-227B
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFN80N50.pdf
(4 pages)
Specifications of IXFN80N50
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
55mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN80N50
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN80N50P
Manufacturer:
ARTESYN
Quantity:
1 000
Part Number:
IXFN80N50P
Quantity:
122
Company:
Part Number:
IXFN80N50Q2
Manufacturer:
WESTINGHOUSE
Quantity:
228
Part Number:
IXFN80N50Q2
Quantity:
123
© 2003 IXYS All rights reserved
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100
80
60
40
20
80
60
40
20
Fig. 1. Output Characteristics
0
0
-50 -25
0
0
Fig. 3. Normalized R
Fig. 5 Drain Current vs. Case Temperature
T
J
V
10
= 25
GS
= 10V
O
1
C
20
0
T
30
I
25
D
C
V
2
T
- Amperes
V
- Degrees C
DS
T
J
GS
J
= 125
= 25
= 9V
- Volts
40
50
8V
7V
6V
O
O
DS(on)
C
C
3
50
75 100 125 150
vs. Drain Current
60
4
70
5V
4V
80
IXFN80N50 - PG 1
5
100
2.8
2.5
2.2
1.9
1.6
1.3
1.0
50
40
30
20
10
80
60
40
20
Fig. 2. High Temperature Output Characteristics
0
0
4.0
25
0
Fig. 4. Temperature Dependence of R
Fig. 6. Input Admittance
V
4.5
T
GS
J
= 125
= 10V
50
2
T
J
5.0
O
= 125
C
T
J
V
o
V
75
C
4
5.5
- Degrees C
GS
DS
I
D
= 80A
- Volts
- Volts
V
GS
6.0
= 9V
100
6
8V
7V
6V
I
D
6.5
=40A
T
IXFN 80N50
J
125
= 25
8
7.0
o
C
4V
5V
7.5
150
10
DS(on)