IXFN80N50 IXYS SEMICONDUCTOR, IXFN80N50 Datasheet - Page 4

• Manufacturer Part Number: IXFN80N50
• Description: N CH MOSFET, 500V, 80A, SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFN80N50

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100
10
Fig. 7 Gate Charge Characteristic Curve
80
60
40
20
8
6
4
2
0
1.000
0.100
0.010
0.001
0
0.2
0
Fig. 9. Source-to-Drain Voltage Drop
Fig.10. Transient Thermal Resistance
10
50
-4
V
V
DS
I
I
GS
D
G
0.4
= 250 V
= 40 A
= 10 mA
= 0V
100 150 200 250 300 350 400
Gate Charge - nC
T
J
0.6
V
= 125
SD
- Volts
O
C
10
0.8
-3
T
J
= 25
1.0
O
C
1.2
10
Pulse Width - Seconds
-2
10000
Fig. 8 Capacitance Curves
30000
1000
100
0
10
-1
5
Ciss
10
Coss
15
V
DS
- Volts
20
Crss
10
25
0
IXFN 80N50
Single Pulse
30
f = 100kHz
35
40
10
1