BUK6E2R3-40C NXP Semiconductors, BUK6E2R3-40C Datasheet - Page 12
BUK6E2R3-40C
Manufacturer Part Number
BUK6E2R3-40C
Description
MOSFET,N CH,40V,120A,SOT226
Manufacturer
NXP Semiconductors
Datasheet
1.BUK6E2R3-40C127.pdf
(15 pages)
Specifications of BUK6E2R3-40C
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
I2-PAK
Rohs Compliant
Yes
NXP Semiconductors
8. Revision history
Table 7.
BUK6E2R3-40C
Product data sheet
Document ID
BUK6E2R3-40C v.1
Revision history
Release date
20100818
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 18 August 2010
N-channel TrenchMOS intermediate level FET
Change notice
-
BUK6E2R3-40C
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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