BUK6E2R3-40C NXP Semiconductors, BUK6E2R3-40C Datasheet - Page 4

• Manufacturer Part Number: BUK6E2R3-40C
• Description: MOSFET,N CH,40V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E2R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E2R3-40C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
300
240
180
120
(A)
I
60
D
10
10
10
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
0
4
3
2
1
10
-1
50
(1)
100
150
Limit R
All information provided in this document is subject to legal disclaimers.
T
003aae288
mb
DSon
(°C)
1
200
= V
Rev. 1 — 18 August 2010
DS
/ I
D
Fig 2.
P
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
DC
50
BUK6E2R3-40C
100
V
DS
(V)
150
100 μ s
10 ms
100 ms
t
1 ms
p
© NXP B.V. 2010. All rights reserved.
=10 μ s
T
mb
003aae247
03na19
(°C)
200
10
2
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