BUK6E2R3-40C NXP Semiconductors, BUK6E2R3-40C Datasheet - Page 5

• Manufacturer Part Number: BUK6E2R3-40C
• Description: MOSFET,N CH,40V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E2R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6E2R3-40C
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.02
0.2
single shot
0.1
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Conditions
see
vertical in free air
Rev. 1 — 18 August 2010
Figure 4
10
-3
N-channel TrenchMOS intermediate level FET
10
-2
BUK6E2R3-40C
Min
-
-
10
P
-1
t
Typ
-
60
p
T
t
p
© NXP B.V. 2010. All rights reserved.
003aae269
(s)
δ =
Max
0.49
-
T
t
p
t
1
Unit
K/W
K/W
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