BUK6E2R3-40C NXP Semiconductors, BUK6E2R3-40C Datasheet - Page 8

• Manufacturer Part Number: BUK6E2R3-40C
• Description: MOSFET,N CH,40V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E2R3-40C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: I2-PAK
• Rohs Compliant: Yes

NXP Semiconductors
BUK6E2R3-40C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
2.5
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
gate-source voltage
-60
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
1
0
min
60
2
typ
max
120
3
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003aad806
V
003aad793
T
GS
j
(°C)
(V)
180
Rev. 1 — 18 August 2010
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
GS(th)
(V)
DSon
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
8
6
4
2
0
-60
junction temperature
of drain current; typical values
0
10
0
V
GS
BUK6E2R3-40C
(V) = 3.3
20
max @1mA
min @2.5mA
typ @1mA
60
30
120
3.6
© NXP B.V. 2010. All rights reserved.
3.4
40
003aae542
T
003aae283
j
I
(°C)
D
(A)
3.8
4.0
5.0
10
180
50
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