PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 11
PSMN1R7-30YL
Manufacturer Part Number
PSMN1R7-30YL
Description
N CHANNEL MOSFET, 30V, 100A
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN1R7-30YL115.pdf
(16 pages)
Specifications of PSMN1R7-30YL
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.29mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PSMN1R7-30YL
Manufacturer:
NXP
Quantity:
51 000
NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 20. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0.0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 04 — 20 April 2010
0.4
T
j
= 150 °C
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
0.6
0.8
003aac447
25 °C
V
SD
(V)
1.0
PSMN1R7-30YL
© NXP B.V. 2010. All rights reserved.
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