PSMN1R7-30YL NXP Semiconductors, PSMN1R7-30YL Datasheet - Page 4

• Manufacturer Part Number: PSMN1R7-30YL
• Description: N CHANNEL MOSFET, 30V, 100A
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 100A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.29mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
10
10
10
(A)
I
AL
10
150
-1
3
2
1
10
All information provided in this document is subject to legal disclaimers.
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10
Rev. 04 — 20 April 2010
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N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
(2)
(1)
(3)
t
AL
003aac266
(ms)
10
50
PSMN1R7-30YL
100
150
© NXP B.V. 2010. All rights reserved.
T
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03aa16
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