BFP405 Infineon Technologies, BFP405 Datasheet - Page 2

• Manufacturer Part Number: BFP405
• Description: RF TRANSISTOR, NPN, SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP405

• Transistor Polarity: N Channel
• Collector Emitter Voltage V(br)ceo: 4.5V
• Gain Bandwidth Ft Typ: 25GHz
• Power Dissipation Pd: 55mW
• Dc Collector Current: 12mA
• Operating Temperature Range: -65°C To +150°C
• Rf: RoHS Compliant
• Dc Current Gain Hfe: 95
• Rohs Compliant: Yes
• Packages: SOT343
• Vceo (max): 4.5 V
• Ic(max): 12.0 mA
• Nfmin (typ): 1.25 dB
• Gmax (typ): 23.0 dB
• Oip3: 15.0 dBm

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
CE
= 0
C
= 0
BE
= 0
= 4 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
4.5
60
-
-
-
Values
typ.
95
5
-
-
-
max.
2005-10-11
100
130
10
1
-
BFP405
Unit
V
µA
nA
µA
-