BFP405 Infineon Technologies, BFP405 Datasheet - Page 5
![RF TRANSISTOR, NPN, SOT-343](/photos/22/7/220759/ge4sot34305-40_sml.jpg)
BFP405
Manufacturer Part Number
BFP405
Description
RF TRANSISTOR, NPN, SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BFP405.pdf
(10 pages)
Specifications of BFP405
Transistor Polarity
N Channel
Collector Emitter Voltage V(br)ceo
4.5V
Gain Bandwidth Ft Typ
25GHz
Power Dissipation Pd
55mW
Dc Collector Current
12mA
Operating Temperature Range
-65°C To +150°C
Rf
RoHS Compliant
Dc Current Gain Hfe
95
Rohs Compliant
Yes
Packages
SOT343
Vceo (max)
4.5 V
Ic(max)
12.0 mA
Nfmin (typ)
1.25 dB
Gmax (typ)
23.0 dB
Oip3
15.0 dBm
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For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
B
E
E
EHA07307
5
C
2005-10-11
BFP405