BLF574 NXP Semiconductors, BLF574 Datasheet - Page 11
BLF574
Manufacturer Part Number
BLF574
Description
LDMOS,RF,500W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574
Transistor Type
RF MOSFET
Drain Source Voltage Vds
110V
Continuous Drain Current Id
56A
Operating Frequency Range
225MHz
Rf Transistor Case
SOT-539A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF574
Manufacturer:
SAMSUNG
Quantity:
1 000
Part Number:
BLF574
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BLF574_2
Product data sheet
Fig 10. Power gain and drain efficiency as functions of
(dB)
G
p
30
28
26
24
22
0
V
load power; typical values
DS
= 50 V; I
8.2.1 1-Tone CW
100
8.2 RF performance
Dq
= 1000 mA; f = 225 MHz.
The following figures are measured in a class-AB production test circuit.
200
300
G
D
p
400
001aaj134
P
L
(W)
Rev. 02 — 24 February 2009
500
80
60
40
20
0
(%)
D
Fig 11. Power gain as function of load power; typical
(dB)
G
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
p
30
28
26
24
22
0
V
values
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 400 mA
= 600 mA
= 800 mA
= 1000 mA
= 1200 mA
= 1400 mA
= 1800 mA
= 50 V; f = 225 MHz.
100
HF / VHF power LDMOS transistor
200
(7)
(6)
(5)
(4)
(3)
(2)
(1)
300
© NXP B.V. 2009. All rights reserved.
400
BLF574
001aaj135
P
L
(W)
500
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