BLF574 NXP Semiconductors, BLF574 Datasheet - Page 12
BLF574
Manufacturer Part Number
BLF574
Description
LDMOS,RF,500W,HF-500MHZ,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574
Transistor Type
RF MOSFET
Drain Source Voltage Vds
110V
Continuous Drain Current Id
56A
Operating Frequency Range
225MHz
Rf Transistor Case
SOT-539A
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF574
Manufacturer:
SAMSUNG
Quantity:
1 000
Part Number:
BLF574
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BLF574_2
Product data sheet
Fig 13. Power gain and drain efficiency as functions of
(dB)
G
p
30
28
26
24
22
0
V
f
peak envelope load power; typical values
2
DS
= 225.05 MHz.
= 50 V; I
100
8.2.2 2-Tone CW
Dq
200
= 1000 mA; f
Fig 12. Load power as function of source power; typical values
300
(1) P
V
1
400
DS
L(1dB)
= 224.95 MHz;
G
D
= 50 V; I
p
P
L(PEP)
= 56.43 dBm (440 W)
500
001aaj137
(W)
Dq
(dBm)
Rev. 02 — 24 February 2009
P
= 1000 mA; f = 225 MHz.
600
L
60
58
56
54
52
50
80
60
40
20
0
24
(%)
D
26
Fig 14. Third order intermodulation distortion as a
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
28
20
40
60
80
0
0
V
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
DS
ideal P
= 600 mA
= 800 mA
= 1000 mA
= 1200 mA
= 1400 mA
= 50 V; f
30
100
P
L
L
HF / VHF power LDMOS transistor
1
(1)
200
= 224.95 MHz; f
32
P
001aaj136
s
(dBm)
(1)
(2)
(3)
(4)
(5)
300
34
400
2
= 225.05 MHz.
P
L(PEP)
© NXP B.V. 2009. All rights reserved.
500
BLF574
001aaj138
(W)
600
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