IXFN200N10P IXYS SEMICONDUCTOR, IXFN200N10P Datasheet - Page 2

• Manufacturer Part Number: IXFN200N10P
• Description: MOSFET, N, SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXFN200N10P

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 200A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7.5mohm
• Rds(on) Test Voltage Vgs: 15V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
fs
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25 A, dI/dt = 100 A/μs
= 50 V, V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V,
D
DS
GS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= 60 A
(T
(T
J
J
5,049,961
5,063,307
5,187,117
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
60
Characteristic Values
Characteristic Values
7600
2900
Typ.
Typ.
0.05
860
150
235
135
0.4
97
30
35
90
50
6,162,665
6,259,123 B1
6,306,728 B1
6
0.22 °C/W
Max.
Max.
200
400
150 ns
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
SOT-227B (IXFN) Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN 200N10P