6N136(TP1F) Toshiba, 6N136(TP1F) Datasheet - Page 5
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6N136(TP1F)
Manufacturer Part Number
6N136(TP1F)
Description
High Speed Optocouplers HIGH SPEED JEDEC OPTOCPLR/SOLID STATE
Manufacturer
Toshiba
Datasheet
1.6N136F.pdf
(8 pages)
Specifications of 6N136(TP1F)
Isolation Voltage
2500 Vrms
Maximum Fall Time
0.8 us
Maximum Rise Time
0.8 us
Output Device
Phototransistor
Configuration
1 Channel
Current Transfer Ratio
24 %
Maximum Baud Rate
1 MBps
Maximum Forward Diode Voltage
1.7 V
Maximum Reverse Diode Voltage
5 V
Maximum Input Diode Current
25 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
DIP-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Test Circuit 1.
Test Circuit 2.
V
CM
I
F
V
O
0
10V
V
V
0V
O
O
t
pHL
SWITCH AT B : I
SWITCH AT A : I
1.5V
10%
90%
t
r
t
pLH
t
r,
t
f
F
F
= 8ns
1.5V
= 16mA
= 0mA
10%
90%
5V
t
f
V
OL
PULSE GEN.
Z
t
10% DUTY
CYCLE
5V
V
f
o
= 5ns
OL
= 50Ω
I
MONITOR
F
V
FF
B
I
F
A
5
(*) C
I
F
wiring capacitance.
1
2
4
3
L
is approximately 15
2
1
4
3
PULSE GEN.
V
CM
7
6
5
8
5
7
6
8
P
F which includes probe and stray
(*)
C
L
5V
V
O
5V
V
O
6N135,6N136
2007-10-01