6N136(TP1F) Toshiba, 6N136(TP1F) Datasheet - Page 6
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6N136(TP1F)
Manufacturer Part Number
6N136(TP1F)
Description
High Speed Optocouplers HIGH SPEED JEDEC OPTOCPLR/SOLID STATE
Manufacturer
Toshiba
Datasheet
1.6N136F.pdf
(8 pages)
Specifications of 6N136(TP1F)
Isolation Voltage
2500 Vrms
Maximum Fall Time
0.8 us
Maximum Rise Time
0.8 us
Output Device
Phototransistor
Configuration
1 Channel
Current Transfer Ratio
24 %
Maximum Baud Rate
1 MBps
Maximum Forward Diode Voltage
1.7 V
Maximum Reverse Diode Voltage
5 V
Maximum Input Diode Current
25 mA
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
DIP-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.05
0.03
0.01
300
100
100
100
0.3
0.1
0.5
0.6
50
30
10
50
30
10
30
10
50
1
3
1
5
3
3
5
1.0
5
1
Ta = 25°C
0.3
0
0.5
Ambient temperature Ta (°C)
Ta =
1.2
Forward current I
Forward voltage V
-
25°C
100°C
25°C
40
1
I
O
1.4
I
OH
I
/ I
F
F
– V
(1) – Ta
3
80
- I
F
5
1.6
F
F
F
120
10
(mA)
V CC = 5V
V O = 0.4V
(V)
1.8
160
30
2.0
50
6
0.05
0.03
0.01
-2.4
-2.2
-1.6
-1.4
-2.0
-1.8
-2.6
0.4
0.2
0.5
0.3
0.1
1.2
1.0
0.8
0.6
10
5
3
1
0
-
0.1
0.1
40
0.3 0.5
-
20
Ambient temperature Ta (°C)
0.3 0.5
Forward current I
Forward current I
0
1
ΔV
I
1
20
F
3
O
I
/ ΔTa – I
O
/ I
5
- I
F
Normalized
TO :
I F = 16mA
V CC = 4.5V
V O = 0.4V
– Ta
F
40
10
3
V CC = 5V
V O = 0.4V
Ta = 25°C
F
F
F
5
30
60
(mA)
(mA)
6N135,6N136
50
10
100
80
2007-10-01
30
100
300