H11AA1TM Fairchild Semiconductor, H11AA1TM Datasheet - Page 6

• Manufacturer Part Number: H11AA1TM
• Description: Transistor Output Optocouplers MOT AC IN-TRANS OUT
• Manufacturer: Fairchild Semiconductor

Specifications of H11AA1TM

• Maximum Input Diode Current: 60 mA
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: AC
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-6

©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
Typical Performance Characteristics
1000
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
10
0.1
Fig. 7 Switching Speed vs. Load Resistor
V
I
R
T
I
V
T
C
F
A
CC
A
L
CC
= 2mA
= 10mA
= 100
= 25 C
= 25 C
= 10V
= 10V
R
Fig. 9 Normalized t
100
BE
R – LOAD RESISTOR (k
– BASE RESISTANCE (k
1
.005
1000
.05
.01
10
.5
.1
5
1
.01
off
10
vs. R
T
.05
T
T
off
Fig. 11 Output Symmetry Characteristics
T
on
r
f
V
10000
BE
.1
CE
– COLLECTOR TO EMITTER VOLTAGE (V)
.5
100
(Continued)
100000
1
6
5
10000
10
1000
100
0.1
10
I
I
NORMALIZED TO:
V
I
F
F
F
1
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
I
CE
F
=
=
= 10 mA
7
6
5
4
3
2
1
0
= 10 mA
0
I
I
= 10 V
10
- 10mA
10mA
Fig. 10 Dark Current vs. Ambient Temperature
V
I
R
T
C
A
CC
L
= 2mA
I
= 100
= 25 C
I
= 10V
20
Fig. 8 Normalized t
T
A
100
R
BE
– AMBIENT TEMPERATURE ( C)
- BASE RESISTANCE (k
V
CE
40
= 30V
1000
on
60
vs. R
V
10000
CE
BE
= 10V
80
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100000
100