PBRP113ZT T/R NXP Semiconductors, PBRP113ZT T/R Datasheet - Page 2

• Manufacturer Part Number: PBRP113ZT T/R
• Description: Digital Transistors BISS RET
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT T/R

• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 0.1
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Collector- Emitter Voltage Vceo Max: 40 V
• Peak Dc Collector Current: 600 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PBRP113ZT,215

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBRP113ZT_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PBRP113ZT
Type number
PBRP113ZT
Symbol
V
V
V
V
I
I
O
ORM
CBO
CEO
EBO
I
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
repetitive peak output current
positive
negative
Description
input (base)
GND (emitter)
output (collector)
Package
Name
-
Rev. 01 — 16 January 2008
Description
plastic surface-mounted package; 3 leads
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
Conditions
open emitter
open base
open collector
t
p
0.33
1 ms;
Marking code
*7M
Simplified outline
1
[1][2]
[1]
[3]
3
Min
-
-
-
-
-
-
-
2
PBRP113ZT
Symbol
© NXP B.V. 2008. All rights reserved.
1
Max
+5
40
40
5
10
600
800
R1
Version
SOT23
sym003
R2
Unit
V
V
V
V
V
mA
mA
2 of 12
3
2