PBRP113ZT T/R NXP Semiconductors, PBRP113ZT T/R Datasheet - Page 4

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PBRP113ZT T/R

Manufacturer Part Number
PBRP113ZT T/R
Description
Digital Transistors BISS RET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBRP113ZT T/R

Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
1 KOhms
Typical Resistor Ratio
0.1
Mounting Style
SMD/SMT
Package / Case
TO-236AB-3
Collector- Emitter Voltage Vceo Max
40 V
Peak Dc Collector Current
600 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PBRP113ZT,215
NXP Semiconductors
6. Thermal characteristics
PBRP113ZT_1
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
SOT23 (TO-236AB); typical values
5
0.50
0.20
0.10
0.05
0.02
0.01
= 1
0
0.75
0.33
10
4
Table 6.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
10
Rev. 01 — 16 January 2008
2
10
1
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
2
O
3
, standard footprint.
Conditions
in free air
1
[1]
[2]
[3]
10
Min
-
-
-
-
PBRP113ZT
Typ
-
-
-
-
10
2
© NXP B.V. 2008. All rights reserved.
t
p
006aab000
(s)
Max
500
338
219
105
10
3
2
Unit
K/W
K/W
K/W
K/W
.
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