PBRP113ZT T/R NXP Semiconductors, PBRP113ZT T/R Datasheet - Page 7

• Manufacturer Part Number: PBRP113ZT T/R
• Description: Digital Transistors BISS RET
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ZT T/R

• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 1 KOhms
• Typical Resistor Ratio: 0.1
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Collector- Emitter Voltage Vceo Max: 40 V
• Peak Dc Collector Current: 600 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PBRP113ZT,215

NXP Semiconductors
PBRP113ZT_1
Product data sheet
Fig 5. DC current gain as a function of collector
Fig 7. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
CEsat
(V)
10
10
FE
10
10
10
1
1
3
2
1
2
V
current; typical values
I
function of collector current; typical values
10
C
amb
amb
amb
amb
amb
amb
CE
1
/I
B
1
= 5 V
= 50
= 100 C
= 25 C
= 40 C
= 100 C
= 25 C
= 40 C
1
10
(1)
(2)
(3)
10
(1)
(2)
(3)
10
2
10
I
C
2
I
006aab079
006aab081
(mA)
C
(mA)
Rev. 01 — 16 January 2008
10
10
3
3
PNP 800 mA, 40 V BISS RET; R1 = 1 k , R2 = 10 k
Fig 6. Collector-emitter saturation voltage as a
Fig 8. Collector-emitter saturation voltage as a
V
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
(V)
10
10
10
10
1
1
2
1
2
I
function of collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
1
1
/I
/I
B
B
= 20
= 100
= 100 C
= 25 C
= 40 C
= 100 C
= 25 C
= 40 C
10
10
(1)
(2)
(3)
(1)
(2)
(3)
PBRP113ZT
10
10
2
2
I
I
© NXP B.V. 2008. All rights reserved.
C
C
(mA)
(mA)
006aab080
006aab082
10
10
3
3
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