AM29LV320DT90EI AMD (ADVANCED MICRO DEVICES), AM29LV320DT90EI Datasheet - Page 50
AM29LV320DT90EI
Manufacturer Part Number
AM29LV320DT90EI
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheets
1.AM29LV320DT90EI.pdf
(55 pages)
2.AM29LV320DT90EI.pdf
(55 pages)
3.AM29LV320DT90EI.pdf
(57 pages)
Specifications of AM29LV320DT90EI
Memory Configuration
4M X 8 / 2M X 16 Bit
Package/case
48-TSOP
Supply Voltage Max
3.6V
Leaded Process Compatible
No
Peak Reflow Compatible (260 C)
No
Access Time, Tacc
90nS
Mounting Type
Surface Mount
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
50
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
Parameter Symbol
CC
Additionally, programming typicals assume checkerboard pattern.
most bytes program faster than the maximum program times listed.
erasure.
command. See
Current
C
C
C
OUT
IN2
IN
Table 14, on page 29
A
= 25°C, f = 1.0 MHz.
Description
Word Mode
Parameter Description
Byte Mode
SS
SS
Control Pin Capacitance
on all pins except I/O pins
on all I/O pins
Output Capacitance
Input Capacitance
CC
. Test conditions: V
for further information on command definitions.
CC
Typ (Note 1) Max (Note 2)
= 2.7 V, 1,000,000 cycles.
0.7
50
11
36
24
9
7
Am29LV320D
CC
= 3.0 V, one pin at a time.
V
V
V
OUT
IN
IN
= 0
= 0
= 0
300
360
210
108
15
72
Test Setup
Test Conditions
–100 mA
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
150°C
125°C
TSOP
TSOP
TSOP
Unit
sec
sec
sec
µs
µs
µs
CC
Excludes 00h programming
, 1,000,000 cycles.
prior to erasure (Note 4)
Typ
Excludes system level
4.2
8.5
5.4
7.5
3.9
6
overhead (Note 5)
Comments
November 15, 2004
V
+100 mA
CC
Max
12.5 V
7.5
5.0
6.5
4.7
12
Min
Max
9
10
20
+ 1.0 V
Unit
Unit
Years
Years
pF
pF
pF
pF
pF
pF