BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 3

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF3G21-6_1
Product data sheet
Table 6.
[1]
Table 7.
T
Table 8.
V
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; I
G
RL
IMD3
Mode of operation: one-tone CW; f = 2000 MHz; I
G
Mode of operation: PHS; f = 1900 MHz; I
G
ACPR
DSS
DSX
GSS
j
DS
fs
D
D
D
(BR)DSS
GS(th)
th(j-c)
DS(on)
rs
p
p
p
= 25 C unless otherwise specified.
in
Thermal resistance is determined under specified RF operating conditions.
= 26 V; T
600k
thermal resistance from junction to case
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
feedback capacitance
Thermal characteristics
Characteristics
Application information
h
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
power gain
drain efficiency
power gain
drain efficiency
adjacent channel power
ratio (600 kHz)
= 25 C unless otherwise specified.
Rev. 01 — 25 June 2008
Dq
Conditions
P
P
P
P
P
P
P
P
P
P
Conditions
V
V
V
V
V
V
V
f = 1 MHz
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L(PEP)
L
L
L(AV)
L(AV)
L(AV)
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 200 mA
= P
= P
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 15 V; V
= V
= 0 V; V
= 2 W
= 2 W
= 2 W
L(1dB)
L(1dB)
= 6 W
= 6 W
= 6 W
= 6 W
< 2 W
GS(th)
GS(th)
Dq
= 90 mA
Conditions
T
D
= 7 W
= 7 W
DS
DS
h
D
D
= 0.13 mA
+ 6 V;
+ 9 V; I
= 25 C; P
= 13 mA
= 0.5 A
DS
= 28 V
= 28 V;
= 0 V
UHF power LDMOS transistor
D
= 0.5 A -
L(AV)
Min
14
-
35
-
-
-
-
-
-
-
BLF3G21-6
= 15 W
Min Typ Max Unit
65
2.0
-
1.85 2.3
-
-
-
Typ
15.5
39
< 50
12.5
43
16
20
Dq
7
32
75
© NXP B.V. 2008. All rights reserved.
= 90 mA
-
2.6
-
-
0.6
1.6
0.3
[1]
Max
-
-
-
-
-
-
-
-
3
29
-
3.0
1
-
140 nA
-
2.07
-
Typ Unit
10
Unit
dB
dB
dBc
dBc
dB
%
dBc
%
dB
%
3 of 12
K/W
V
V
A
S
pF
A