BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 7

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
BLF3G21-6_1
Product data sheet
Fig 10. Component layout for 2 GHz class-AB test circuit
Dimensions in mm.
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with
Teflon dielectric (
The other side is unetched and serves as a ground plane.
See
Table 9
C2
for list of components.
C1
Rev. 01 — 25 June 2008
r
C3
= 2.2); thickness = 0.51 mm.
R2
R1
C4
C20
C21
C5
C17
52 mm
C6
C7
C18
C15
C14
C13
C12
C8
C16
L1
C19
L2
C9
C10
UHF power LDMOS transistor
C11
001aai233
BLF3G21-6
mm
54
© NXP B.V. 2008. All rights reserved.
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