BLF3G21-6 NXP Semiconductors, BLF3G21-6 Datasheet - Page 9

• Manufacturer Part Number: BLF3G21-6
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF3G21-6

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 2.07 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 2.3 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDIP SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF3G21-6,112

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT538A
BLF3G21-6_1
Product data sheet
Ceramic surface-mounted package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT538A
0.116
0.090
2.95
2.29
A
H
z 2 (4 )
A
z 1 (4 )
0.053
0.047
1.35
1.19
b
0.009
0.007
0.23
0.18
c
IEC
0.203
0.197
5.16
5.00
D
0.183
0.177
4.65
4.50
D 1
D 1
D 2
D
b
0.203
0.197
JEDEC
5.16
5.00
D 2
1
2
3
0
REFERENCES
0.163
0.157
4.14
3.99
E
Rev. 01 — 25 June 2008
w 1
M
0.143
0.137
3.63
3.48
B
E 1
M
JEITA
0.163
0.157
4.14
3.99
z 4 (4 )
B
E 2
scale
2.5
0.295
0.285
7.49
7.24
H
0.080
0.050
2.03
1.27
L
E 2
A
0.004
0.000
0.10
0.00
5 mm
Q
E 1
z 3 (4 )
0.010
L
0.25
w 1
UHF power LDMOS transistor
PROJECTION
c
EUROPEAN
0.023
0.017
0.58
0.43
Q
z 1
0.010
0.007
BLF3G21-6
0.25
0.18
z 2
0.038
0.032
© NXP B.V. 2008. All rights reserved.
0.97
0.81
z 3
ISSUE DATE
02-08-20
06-03-16
0.020
0.000
E
0.51
0.00
z 4
SOT538A
7
0
7
0
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