BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 10

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
BF1214_1
Product data sheet
Fig 13. Amplifier A: input admittance as a function of
Fig 15. Amplifier A: reverse transfer admittance and
b
(mS)
is
( S)
|y
, g
10
10
rs
10
10
10
10
|
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(A)
10
D(A)
DS(A)
DS(A)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(B)
rs
DS(B)
rs
is
is
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
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Rev. 01 — 30 October 2007
10
10
3
3
10
(deg)
10
10
1
3
rs
2
Fig 14. Amplifier A: forward transfer admittance and
Fig 16. Amplifier A: output admittance as a function of
b
os
(mS)
(mS)
|y
10
10
, g
fs
10
|
10
10
os
1
1
2
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(A)
D(A)
DS(A)
DS(A)
= 18 mA.
= 18 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
|y
b
g
DS(B)
os
os
DS(B)
fs
fs
|
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2007. All rights reserved.
001aah005
001aah007
BF1214
10
10
3
3
10
(deg)
10
1
10 of 18
2
fs