BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 7

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
BF1214_1
Product data sheet
Fig 4. Gate1 current as a function of gate1 voltage;
Fig 6. Drain current as a function of gate1 current;
(mA)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
G1
I
D
120
80
40
24
18
12
0
6
0
V
typical values
V
typical values
0
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS
DS
= 5 V; T
= 5 V; V
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
0.5
j
G2-S
= 25 C.
20
= 4 V; T
1.0
j
= 25 C.
40
1.5
I
G1
V
001aag995
G1-S
001aag997
( A)
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Rev. 01 — 30 October 2007
2.0
60
Fig 5. Forward transfer admittance as a function of
Fig 7. Drain current as a function of gate1 supply
(mS)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
|y
I
D
fs
40
|
30
20
10
20
15
10
0
5
0
V
drain current; typical values
V
voltage (V
0
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS
DS
(7)
= 5 V; T
= 5 V; V
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
1
(6)
10
GG
j
G2-S
Dual N-channel dual gate MOSFET
= 25 C.
); typical values
= 4 V; R
2
(5)
20
G1
= 68 k ; T
3
(4)
30
(3)
© NXP B.V. 2007. All rights reserved.
4
I
001aag996
D
001aag998
V
j
(2)
BF1214
(1)
= 25 C.
GG
(mA)
(V)
40
5
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