BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 8

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
BF1214_1
Product data sheet
Fig 8. Drain current as a function of V
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
(8) R
(9) R
I
D
25
20
15
10
5
0
V
typical values
0
G2-S
G1
G1
G1
G1
G1
G1
G1
G1
G1
= 47 k .
= 56 k .
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
= 180 k .
= 220 k .
= 4 V; T
1
j
= 25 C.
2
3
(1)
(2)
(3)
(4)
(5)
V
GG
4
DS
001aag999
= V
and V
DS
(6)
(7)
(8)
(9)
Rev. 01 — 30 October 2007
(V)
5
GG
;
Fig 9. Drain current as a function of gate2 voltage;
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
I
D
30
20
10
0
T
typical values
0
j
GG
GG
GG
GG
GG
= 25 C; R
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
1
Dual N-channel dual gate MOSFET
G1
= 68 k (connected to V
2
3
© NXP B.V. 2007. All rights reserved.
4
V
001aah000
BF1214
G2-S
GG
).
(1)
(2)
(3)
(4)
(5)
(V)
5
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