BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 3

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
4. Marking
5. Limiting values
BF1214_1
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BF1214
Symbol
Per MOSFET
V
I
I
I
P
T
T
D
G1
G2
Fig 1. Power derating curve
stg
j
DS
tot
T
sp
is the temperature at the soldering point of the source lead.
Marking
Limiting values
Parameter
drain-source voltage
drain current
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
(mW)
P
Rev. 01 — 30 October 2007
tot
250
200
150
100
50
0
0
Marking
SB*
50
Conditions
DC
DC
T
100
sp
107 C
Dual N-channel dual gate MOSFET
150
T
001aac193
sp
[1]
(˚C)
Min
-
-
-
-
-
-
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
65
200
Max
6
30
180
+150
150
© NXP B.V. 2007. All rights reserved.
10
10
BF1214
Unit
V
mA
mA
mA
mW
C
C
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