BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet
BLF4G10LS-120
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BLF4G10LS-120 Summary of contents
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... BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 920 MHz to 960 MHz; T Mode of operation CW GSM EDGE 2-tone [1] ACPR [2] ACPR CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 868 MHz to 961 MHz frequency range. 2. Pinning information Table 2: Pin [1] Connected to flange 3. Ordering information Table 3: Type number BLF4G10LS-120 - 4. Limiting values Table 4: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... Symbol G p IRL D ACPR 400 ACPR 600 EVM rms EVM M 7.1 Ruggedness in class-AB operation The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 650 mA 9397 750 14547 Product data sheet Characteristics Parameter Conditions drain-source breakdown ...
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... P ( case Fig 2. Two-tone CW power gain and drain efficiency 001aac412 IMD3 (dBc (W) L(AV case (1) I (2) I (3) I (4) I Fig 4. Third order intermodulation distortion as a Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor 650 mA case f = 960 MHz as functions of average load power; typical ...
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... C; case Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as 001aac416 ACPR (dBc) M rms (W) L(AV case Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor 50 60 ACPR 400 70 ACPR 600 650 mA ...
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See Table 8 for list of components. Fig 9. Class-AB test circuit 960 MHz C10 C4 RF out C3 001aad830 ...
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Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) ( See Table 8 for list of components. Fig 10. Component layout for 960 MHz test circuit PHILIPS PHILIPS ...
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... Philips electrolytic capacitor Philips chip resistor Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor and Figure 10) Value Dimensions Catalogue number 68 pF 5 1812X7R105KL2AB 220 F 5 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Global System for Mobile communications quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak Envelope Power Radio Frequency Surface Mount Device Voltage Standing Wave Ratio Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Release date BLF4G10LS-120_1 20060110 9397 750 14547 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor Doc. number Supersedes 9397 750 14547 - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 10 January 2006 BLF4G10LS-120 UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 12 BLF4G10LS-120 UHF power LDMOS transistor © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...