BLF4G10LS-120 NXP Semiconductors, BLF4G10LS-120 Datasheet - Page 2

• Manufacturer Part Number: BLF4G10LS-120
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-120,112

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
9397 750 14547
Product data sheet
1.3 Applications
Table 2:
[1]
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5:
Pin
1
2
3
Type number
BLF4G10LS-120 -
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 868 MHz to 961 MHz frequency range.
Connected to flange
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to case
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
Rev. 01 — 10 January 2006
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
Conditions
T
case
P
P
L
L
= 60 W
= 120 W
= 80 C
[1]
Simplified outline
BLF4G10LS-120
UHF power LDMOS transistor
1
2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
Min
-
-
-
3
0.5
65
Typ
0.62
0.52
Symbol
Max
65
+15
12
+150
200
Max
0.71
0.61
2
sym039
Version
SOT502B
Unit
V
V
A
1
3
C
C
Unit
K/W
K/W
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