1N3595TR Fairchild Semiconductor, 1N3595TR Datasheet
1N3595TR
Manufacturer Part Number
1N3595TR
Description
DIODE SGL JUNC LOLEAK 150V DO-35
Manufacturer
Fairchild Semiconductor
Datasheet
1.1N3595TR.pdf
(2 pages)
Specifications of 1N3595TR
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
1nA @ 125V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
3µs
Capacitance @ Vr, F
8pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
1 V
Recovery Time
3000 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.001 uA
Power Dissipation
0.5 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1N3595TRTR
1N3595TRTR
1N3595TRTR
2002 Fairchild Semiconductor Corporation
Small Signal Diode
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Electrical Characteristics
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Symbol
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
stg
J
RRM
D
R
F
T
JA
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
Parameter
Parameter
T
A
= 25°C unless otherwise noted
1N3595
Color Band Denotes Cathode
T
A
= 25°C unless otherwise noted
I
I
I
I
I
I
I
V
V
V
V
V
I
R
R
F
F
F
F
F
F
F
DO-35
R
R
R
R
R
L
= 1.0 mA
= 5.0 mA
= 10 mA
= 50 mA
= 100 mA
= 200 mA
= 10 mA, V
= 100 A
= 1.0 k
= 125 V
= 30 V, T
= 125 V, T
= 125 V, T
= 0, f = 1.0 MHz
Test Conditions
A
R
A
A
= 125 C
= 3.5 V,
= 125 C
= 150 C
-65 to +200
Value
Value
Min
0.52
0.60
0.65
0.75
0.79
0.83
150
150
200
175
500
300
1.0
4.0
Max
0.68
0.75
0.80
0.88
0.92
1.00
0.3
0.5
1
3
8
3
Units
Units
mW
mA
C/W
Units
V
A
A
C
C
nA
1N3595, Rev. A
pF
V
V
V
V
V
V
V
A
A
A
s
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1N3595TR Summary of contents
Page 1
... Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Current R C Total Capacitance T t Reverse Recovery Time rr 2002 Fairchild Semiconductor Corporation 1N3595 DO-35 Color Band Denotes Cathode T = 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions I = 100 ...
Page 2
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...