ES3D Fairchild Semiconductor, ES3D Datasheet - Page 2
![DIODE ULTRAFAST 200V 3A DO-214AB](/photos/5/33/53316/es3d_sml.jpg)
ES3D
Manufacturer Part Number
ES3D
Description
DIODE ULTRAFAST 200V 3A DO-214AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.ES3D.pdf
(4 pages)
Specifications of ES3D
Voltage - Forward (vf) (max) @ If
950mV @ 3A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
20ns
Capacitance @ Vr, F
45pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.95 V
Recovery Time
20 ns
Forward Continuous Current
3 A @ Ta=75C
Max Surge Current
100 A
Reverse Current Ir
10 uA
Power Dissipation
1.66 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ES3DFSTR
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Part Number
Manufacturer
Quantity
Price
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ES3A - ES3J Rev. F
Typical Performance Characteristics
Figure 1. Foward Current Deration Curve
NOTES:
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
50Ω
NONINDUCTIVE
Figure 3. Total Capacitance
50Ω
NONINDUCTIVE
50V
(approx)
DUT
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
Pulse
Generator
(Note 2)
(-)
(+)
2
Figure 4. Reverse Current vs Reverse Voltage
Figure 2. Foward Voltage Characteristics
0.01
100
0.1
10
1
0.4
-0.25A
+0.5A
-1.0A
0
0.6
Forward Voltage Drop, V
0.8
ES3A-ES3D
1.0cm
1.0
trr
1.2
SET TIME BASE FOR
T
Pulse Width = 300us
2% Duty Cycle
5/ 10 ns/ cm
A
=25
1.4
F
[V]
o
C
1.6
ES3J
www.fairchildsemi.com
1.8