APT40DQ100BG Microsemi Power Products Group, APT40DQ100BG Datasheet - Page 3

• Manufacturer Part Number: APT40DQ100BG
• Description: DIODE ULT FAST 40A 1000V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT40DQ100BG

• Voltage - Forward (vf) (max) @ If: 3V @ 40A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 40A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT40DQ100BGMI; APT40DQ100BGMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
120
100
500
160
140
120
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
80
60
40
20
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
t
V
V
80A
rr
J
R
F
F
T
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
V
T
T
R
J
1.0
J
, REVERSE VOLTAGE (V)
= 125°C
= 175°C
400
I
RRM
50
Q
10
rr
600
2.0
75
20A
T
800
100
J
= -55°C
T
3.0
J
t
rr
= 25°C
Q
1000
125
rr
100 200
40A
1200
4.0
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
50
35
30
25
20
15
10
70
60
50
40
30
20
10
0
5
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
20A
80A
600
600
100
40A
80A
40A
800
800
125
Duty cycle = 0.5
T
1000
1000
J
T
V
150
J
R
= 175°C
= 125°C
= 667V
20A
1200
1200
175